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Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification
Compact and robust isolated SiC MOSFET driver incorporates active clamping and <2 µs short-circuit turn-off time

SAN JOSE, Calif.--(BUSINESS WIRE)-- Power Integrations (Nasdaq: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced that its SIC118xKQ SCALE-iDriver™, a high-efficiency, single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. Devices can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs and feature sophisticated safety and protection features.

The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications, exhibiting rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation. Critical safety features include Drain to Source Voltage (VDS) monitoring, SENSE readout, primary and secondary Undervoltage Lock-out (UVLO), current-limited gate drive and Advanced Active Clamping (AAC) which facilitates safe operation and soft turn-off -under fault conditions. AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions. Gate-drive control and AAC features allow gate resistance to be minimized; this reduces switching losses, maximizing inverter efficiency.

By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a revolution in gate-driver IC technology compared to opto-, capacitive- or Si- isolated magnetic couplers. The combination dramatically improves isolation capability, and enables safe, cost-effective designs for inverters with very few external components up to 300 kW.

Comments Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations: “Silicon carbide MOSFET technology opens the door for smaller, lighter automotive inverter systems. Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short-circuit response quickly protects the system in the event of a fault.”

“Furthermore, SCALE-iDriver sets a new standard in isolation robustness for functional safety; even if a power device causes catastrophic driver failure, SCALE-iDriver’s isolation remains intact ensuring that no part of the chassis will carry life-threatening high voltages,” continued Hornkamp.

The new single-channel SIC118xKQ gate drivers provide up to 8 A and suit SiC MOSFETs with standard gate-emitter voltages from +15 V, with various negative voltages in the range from -3 V to -15 V. Devices exhibit high external magnetic field immunity, and are available in a compact eSOP package that provides ≥9.5 mm of creepage and clearance, using material that has the highest CTI level (CTI =600 per IEC 60112). They are available now, priced at $5.39 in 10,000 piece quantities. Technical information is available from the Power Integrations website at http://www.power.com/products/scale-idriver-ic-family/sic118xkq/.

2020031801 / 18.03.2020 / Komponenty elektroniczne / Power Integrations /

Power Integrations Delivers AEC-Qualified Buck Switcher IC with 850 mA Output for Low-Part-Count Automotive PSUs
LinkSwitch-TN2Q supports 30-550 VDC input with integrated system-level protection

Power Integrations Bundles New Three-Phase BLDC Control Software into Motor-Expert Suite for BridgeSwitch IC Family
Hardware-Software Solution for Three-Phase BLDC Motor Inverters Enables Greater Than 98 Percent Efficiency, Saves PCB Space and Speeds Time-to-Market

Power Integrations’ New MinE-CAP IC Reduces Volume of AC-DC Converters by Up to 40%
Novel MinE-CAP device dramatically reduces the input bulk capacitor size, reduces in-rush current by up to 95%, eliminates NTC thermistors and associated losses

Power Integrations Demonstrates Continued Industry Leadership as InnoSwitch IC Sales Surpass One Billion Units
Newest GaN-based devices provide up to 100 W of power and support applications from USB PD adapters to auxiliary power supplies for appliances

Power Integrations Targets Compact Smart-Lighting Designs With Highly Efficient GaN-Powered LYTSwitch-6 LED Drivers
Enables dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage

Power Integrations Releases Highly Integrated InnoSwitch3 Flyback Switcher IC for Automotive BEV and PHEV Applications
InnoSwitch3-AQ achieves Q100; operates efficiently from 30 V to 550 V DC input

LinkSwitch-TN2 High-Voltage Switcher ICs from Power Integrations Now Certified for Automotive Use
High-reliability, space-saving buck/flybackswitcher ICs target 400 VDC EV applications

Power Integrations’ GaN Technology Increases Output Power of High-Efficiency Display PSUs to 75 W
Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™ devices. As part of a chipset with Power Integrations’ InnoMux™ controller IC, the new switcher ICs now support display and appliance power supply applications with a continuous output power of up to 75 W without a heatsink.

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification
Compact and robust isolated SiC MOSFET driver incorporates active clamping and <2 µs short-circuit turn-off time

Power Integrations Expands Range of InnoSwitch3 ICs Incorporating Robust 750 V GaN Transistors
PowiGaN technology permits manufacture of 94% efficient power supplies suitable for regions with frequent brown-outs and line surges

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CES® 2024, 9.1.-12.1.2024, Las Vegas
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