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s-Sense
 
Moduły s-Sense firmy R&D SOFTWARE SOLUTI
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Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Nexperia, the expert in essential semiconductors, has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.

The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. at 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages."

Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.

650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now. More information including product specs and datasheets is available at www.nexperia.com/gan-fets.

2020061101 / 11.06.2020 / Komponenty elektroniczne / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia establishes new Application Specific FET category to deliver optimized performance
‘ASFETs’ feature MOSFET parameters tailored for particular applications

Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
AEC-Q101-qualified DFN2020D-6 devices save up to 90% PCB space; side-wettable flanks enable automated inspection (AOI) and improve reliability

Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”.

New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Industry-benchmark performance devices now AEC-Q101 qualified - protecting infotainment, multimedia and ADAS systems.

Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia, the expert in essential semiconductors, today announced ‘Power Live’ a virtual conference on the 2nd and 3rd of July which will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.

Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia today announced the industry’s widest portfolio of automotive-qualified discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia launches P-channel MOSFETs in robust, space-saving LFPAK56 package
Nexperia, the expert in essential semiconductors, has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, with RDS(on) down to 10 mΩ (30 V)

Ultra-tiny MOSFETs from Nexperia are 36% smaller with lowest RDS(on)
Nexperia has launched a range of MOSFETs in the ultra-small DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest RDS(on) for their size and employ the commonly used pitch of 0.35 mm to simplify PCB assembly processes.

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GAMING, AKCESORIA KOMPUTEROWE I NIE TYLKO


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electronica 2024, 12.11.-15.11.2024, Munich, DE


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Kalendarz
SENSOR+TEST 2024, 11.-13.6.2024, Nuremberg, DE
electronica 2024, 12.11.-15.11.2024, Munich, DE
DistribuTECH, 11.2.-13.2.2025, Dallas, TX

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